InterFET IFN860 JFET JFET N-채널(듀얼) -20V 저소음

Technology: Si

Unit Weight: 4.885 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Gate-Source Cutoff Voltage: - 3 V

Drain-Source Current at Vgs=0: 10 mA

Id - Continuous Drain Current: 100 uA

Forward Transconductance - Min: 25 mS

Vgs - Gate-Source Breakdown Voltage: - 20 V

Vds - Drain-Source Breakdown Voltage: 10 V