InterFET IFNU406 JFET JFET N-채널 (듀얼) -50V 저 Ciss

Technology: Si

Unit Weight: 2.384 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 2.5 V

Drain-Source Current at Vgs=0: 10 mA

Id - Continuous Drain Current: 200 uA

Forward Transconductance - Min: 0.5 mS

Vgs - Gate-Source Breakdown Voltage: - 50 V

Vds - Drain-Source Breakdown Voltage: 15 V