InterFET J110A JFET JFET N-채널 -25V 저소음

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 4 V

Drain-Source Current at Vgs=0: 10 mA

Rds On - Drain-Source Resistance: 25 Ohms

Vgs - Gate-Source Breakdown Voltage: - 25 V