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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 15 mA
Id - Continuous Drain Current: 1 nA
Forward Transconductance - Min: 4000 uS
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 15 V
