InterFET SMP5484TR JFETs JFET N-채널 -25V 저 Ciss

Technology: Si

Unit Weight: 11.667 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 300 mV

Drain-Source Current at Vgs=0: 5 mA

Id - Continuous Drain Current: 10 nA

Forward Transconductance - Min: 3 mS

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 15 V