IXYS IXA 40PG1200DHG LB IGBT 모듈 XPT IGBT 페이즈레그

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Pd - Power Dissipation: 230 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 63 A