IXYS IXBX50N360HV IGBT 트랜지스터 3600V/125A 역전도 IGBT

Width: 5.1 mm

Height: 21.4 mm

Length: 16.2 mm

Technology: Si

Unit Weight: 6.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 660 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3.6 kV

Collector-Emitter Saturation Voltage: 2.9 V

Continuous Collector Current at 25 C: 125 A