IXYS IXBX55N300 IGBT 트랜지스터 디스크 IGBT BiMSFT-VeryHiVolt TO-247AD

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 625 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 25 V, 25 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3 kV

Continuous Collector Current Ic Max: 600 A

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 130 A