IXYS IXDN75N120 IGBT 트랜지스터 75암페어 1200V

Width: 25.07 mm

Height: 9.6 mm

Length: 38.2 mm

Technology: Si

Unit Weight: 30 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 660 W

Continuous Collector Current: 150 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 150 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 150 A