IXYS IXFN26N120P 디스크리트 반도체 모듈 26암페어 1200V

Width: 25.42 mm

Height: 9.6 mm

Length: 38.23 mm

Fall Time: 58 ns

Rise Time: 55 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 695 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 56 ns

Typical Turn-Off Delay Time: 76 ns

Id - Continuous Drain Current: 23 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 460 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV