IXYS IXFN38N80Q2 디스크리트 반도체 모듈 38암페어 800V 0.22 Rds

Fall Time: 12 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 735 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 220 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V