IXYS IXFT120N15P MOSFETs 120암페어 150V 0.016 Rds

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Fall Time: 26 ns

Rise Time: 42 ns

Technology: Si

Unit Weight: 4.500 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 600 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 33 ns

Typical Turn-Off Delay Time: 85 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V