IXYS IXGF32N170 IGBT 트랜지스터 26암페어 1700V 3.5V Rds

Width: 5.21 mm

Height: 21.34 mm

Length: 20.29 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 200 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 44 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current Ic Max: 200 A

Collector-Emitter Saturation Voltage: 3.5 V

Continuous Collector Current at 25 C: 44 A