IXYS IXGH28N60B3D1 IGBT 트랜지스터 600V, 28A, 110도C, TO-247AD-3

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 190 W

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 150 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 28 A