IXYS IXGH30N60C3D1 IGBT 트랜지스터 고주파 범위 40kHz C-IGBT w/다이오드

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Technology: Si

Unit Weight: 1.600 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 220 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.6 V

Continuous Collector Current at 25 C: 60 A