IXYS IXGP2N100 IGBT 트랜지스터 4암페어 1000V 2.7 Rds

Width: 4.83 mm

Height: 9.15 mm

Length: 10.66 mm

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1 kV

Continuous Collector Current Ic Max: 4 A