IXYS IXGR48N60C3D1 IGBT 트랜지스터 48암페어 600V

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Technology: Si

Unit Weight: 5.300 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 125 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 56 A

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 56 A