IXYS IXTH10P50P PolarP 파워 MOSFET -10.0 암페어 -500V 1.000 Rds

Width: 5.3 mm

Height: 21.45 mm

Length: 16.24 mm

Fall Time: 44 ns

Rise Time: 28 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 50 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 52 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.5 S

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 4 V