IXYS IXTH220N20X4 MOSFETs TO247 200V 220A N-CH X4CLASS

Fall Time: 6 ns

Rise Time: 15 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 157 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 800 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 87 ns

Id - Continuous Drain Current: 220 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 90 S

Rds On - Drain-Source Resistance: 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V