IXYS IXTH26P20P MOSFETs -26.0 암페어 -200V 0.170 Rds

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Fall Time: 21 ns

Rise Time: 33 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 26 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 170 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V