IXYS IXTH86N20T MOSFETs 86암페어 200V 29 Rds

Technology: Si

Unit Weight: 6 g

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 86 A

Rds On - Drain-Source Resistance: 29 Ohms

Vds - Drain-Source Breakdown Voltage: 200 V