IXYS IXTJ6N150 MOSFETs 고전압 파워 MOSFET

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 67 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.85 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V