IXYS IXTN200N10L2 선형 전력 MOSFET 선형 L2 전력 MOSFET 확장 FBSOA 포함

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 50 V

Pd - Power Dissipation: 830 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 178 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V