IXYS IXTN60N50L2 리니어 파워 MOSFET 60암페어 500V

Width: 25.42 mm

Height: 12.22 mm

Length: 38.23 mm

Fall Time: 38 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 100 V

Pd - Power Dissipation: 735 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 165 ns

Id - Continuous Drain Current: 53 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V