IXYS IXTP10P15T MOSFETs TenchP 파워 MOSFET

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 350 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V