IXYS IXTQ96N20P MOSFETs 96암페어 200V 0.024 Rds

Fall Time: 30 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 5.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 145 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 600 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 75 ns

Id - Continuous Drain Current: 96 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 24 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V