IXYS IXXH60N65B4 IGBT 트랜지스터 650V/116A TRENCH IGBT GENX4 XPT

Technology: Si

Unit Weight: 4.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 536 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 60 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 145 A