IXYS IXYA55N65B5 IGBT 트랜지스터 650V, 55A, XPT Gen5 B5 IGBT TO-263 패키지

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 395 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 122 A

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 122 A