IXYS IXYB82N120C3H1 IGBT 트랜지스터 XPT IGBT C3-클래스 1200V/160A; 코팩

Technology: Si

Unit Weight: 10.600 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.04 kW

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 164 A

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 164 A