빠른 지원
인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 680 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 136 A
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 136 A
