IXYS IXYH90N65A5 IGBT 트랜지스터 XPT 박막 기술, 5세대 (GenX5) 트렌치 IGBT. 디스크 IGBT XPT-GenX5 TO247

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 650 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 220 A

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 220 A