IXYS IXYP10N65B3D1 IGBT 트랜지스터 디스크 IGBT XPT-GenX3 TO-220AB/FP

Technology: Si

Unit Weight: 2.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 160 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 32 A