IXYS MCB40P1200LB-TUB 하프 브리지 모듈 SiC MOSFET 페이즐 25mO SMPD-B

Technology: SiC

Unit Weight: 10 g

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 58 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV