IXYS MMIX1X200N60B3H1 IGBT 트랜지스터 SMPD 전력 장치

Technology: Si

Unit Weight: 8 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 520 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 175 A