IXYS NGB8206ANSL3G IGBT 트랜지스터 IGBT 20A 350V N-채널

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 150 W

Gate-Emitter Leakage Current: 350 uA

Maximum Gate Emitter Voltage: - 15 V, 15 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 390 V

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 20 A