JPT 808nm-60W-200μm Laser Diode

Application

Solid-state laser pumping

Medical application 

Material processing

Specification

Optical Parameters

Output Power: min 60W

Center Wavelength (nm): min 805; typical 808; max 811

Spectral Width(FWHM): typical 4 nm

Back Reflection Isolation Range (nm): min 1040; typical 1060; max 1200

Electrical Parameters 

Conversion Efficiency (%): typical 45

Threshold Current (A): typical 1.8

Operating Current (A): typical 9.5; max 10

Operating Voltage (V): typical 14; max 14.5

Slope Efficiency (W/A): typical 5.3

Fiber Parameters

Core Diameter (μm): typical 200

Numerical Aperture (NA): typical 0.22

Fiber Length (m): typical 2

Fiber Connector: typical SMA905

Fiber Bend Radius (mm): min 80

Thermal Parameters

Package Operating Temperature (℃): min 20; max 35

Storage Temperature (℃): min -20; max 85

Wavelength Temperature Coefficient (nm/℃): typical 0.3

Lead Soldering Temperature (℃): typical 260

Lead Soldering Time (s): typical 10

JPT has different kinds of semiconductor laser components and high-power laser modules. Semiconductor laser can be widely used in pump source, industrial processing, mechanical vision, medical and many other fields. Based on the mature coupling technology solution, thermal control and packaging process, the product has the advantages of high power, high beam quality, high stability, etc., and the product wavelength covers 400nm~1000nm, which meets the special requirements of power, brightness, wavelength control, spot uniformity and so on.