Linear Integrated Systems 3N163-SOT-143-4L-CT MOSFETs 단일, P-채널 향상 모드 MOSFET

Rise Time: 24 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 350 mW, 375 mW

Vgs - Gate-Source Voltage: - 6.5 V, + 6.5 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 30 mA

Forward Transconductance - Min: 2 mS

Rds On - Drain-Source Resistance: 250 Ohms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 5 V