Linear Integrated Systems LSK170D-SOT-23-3L-CT JFET 저잡음 및 정전용량, 고입력 임피던스, N-채널 JFET

Technology: Si

Unit Weight: 8.800 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Gate-Source Cutoff Voltage: - 2 V

Maximum Drain Gate Voltage: 15 V

Drain-Source Current at Vgs=0: 30 mA

Id - Continuous Drain Current: 2 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 14 mS

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 40 V