MACOM CGH31240F GaN SiC HEMT 증폭기, 240W, 3.1GHz, GaN HEMT, 28V

Gain: 12 dB

Technology: GaN

Unit Weight: 32.095 g

Output Power: 240 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 345 W

Maximum Operating Frequency: 3.1 GHz

Minimum Operating Frequency: 2.7 GHz

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V