MACOM PTVA120251EA-V2-R0 RF 파워 MOSFET RF LDMOS FET

Gain: 18 dB

Technology: Si

Output Power: 25 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 500 MHz to 1.4 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: 10 V

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 105 V