Micro Commercial Components (MCC) BSS138AHE3-TP MOSFETs 50Vds 20Vgs N-채널 FET

Fall Time: 8.1 ns

Rise Time: 2.7 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 620 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 220 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.5 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 1.45 V