Micro Commercial Components (MCC) SI06P02KL3-TP MOSFETs P-채널 MOSFET, DFN1006-3

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.2 nC

Transistor Polarity: P-Channel

Pd - Power Dissipation: 780 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 950 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 580 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V