Micro Commercial Components (MCC) SI2324A-TP MOSFETs N-채널 향상형 FET 100Vds 2A 8A 20Vgs 22pF

Fall Time: 10 ns

Rise Time: 52 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N- Channel

Qg - Gate Charge: 4.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 S

Rds On - Drain-Source Resistance: 280 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V