Microchip Technology 2N2222Ae3 BJTs - 바이폴라 트랜지스터 40V 800mA 500mW 무연 소형 신호 BJT THT

Technology: Si

Unit Weight: 1.628 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 800 mA

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 1 V