Microchip Technology 2N2369AUA/TR BJTs - 바이폴라 트랜지스터 15V 200mA 680mW NPN 소신호 BJT SMT TR

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 120

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 40 V

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 450 mV