Microchip Technology 2N2906AUB BJTs - 바이폴라 트랜지스터 40V 600mA 400mW PNP 3핀 CER 소형 신호 BJT

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 400 mV