Microchip Technology 2N2920U BJTs - 바이폴라 트랜지스터 60V 30MA 350MW 듀얼 소형 신호 BJT SQ SMT

Technology: Si

Unit Weight: 23.375 g

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 70 V

Maximum DC Collector Current: 30 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 300 mV