Microchip Technology 2N2945AUB/TR BJTs - 바이폴라 트랜지스터 20V 100mA 400 mW 라운드 엔드 소형 신호 BJT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

Emitter- Base Voltage VEBO: 25 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 20 V