Microchip Technology 2N328A BJTs - 바이폴라 트랜지스터 소신호 BJT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

Emitter- Base Voltage VEBO: 20 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 100 mA

Maximum Operating Temperature: + 165 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 35 V

Collector-Emitter Saturation Voltage: 500 mV