Microchip Technology 2N4900 BJTs - 바이폴라 트랜지스터 파워 BJT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 25 W

DC Current Gain hFE Max: 100

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1.3 V